Electron density and mobility in p-type narrow-gap II-VI semiconductor compoundsREMESNIK, V. G; TALIPOV, N. K.Soviet physics. Semiconductors. 1991, Vol 25, Num 6, pp 658-660, issn 0038-5700Article

Planar photodiodes based on p-HgCdTe (x = 0.22) epilayers grown by molecular beam epitaxyOVSYUK, V. N; REMESNIK, V. G; LIBERMAN, V. G et al.Infrared physics & technology. 1996, Vol 37, Num 3, pp 321-323, issn 1350-4495Article

Inversion of the conduction of CdxHg1-xTe films subjected to a plasma treatmentDVURECHENSKII, A. V; REMESNIK, V. G; RYAZANTSEV, I. A et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 1, pp 90-92, issn 1063-7826Article

Structural and optical properties of noncentrosymmetric quaternary crystal AgCd2GaS4ATUCHIN, V. V; PANKEVICH, V. Z; PARASYUK, O. V et al.Journal of crystal growth. 2006, Vol 292, Num 2, pp 494-499, issn 0022-0248, 6 p.Article

The growth of high-quality MCT films by MBE using in-situ ellipsometrySVITASHEV, K. K; DVORETSKY, S. A; SIDOROV, YU et al.Crystal research and technology (1979). 1994, Vol 29, Num 7, pp 931-937, issn 0232-1300Article

Influence of annealing under and anodic oxide on changes in the composition of the surface and conversion of the type of conduction of p-type Cd_xHg_1-xTe (x~0.2) single crystalsTALIPOV, N. K; POPOV, V. P; REMESNIK, V. G et al.Soviet physics. Semiconductors. 1992, Vol 26, Num 2, pp 175-179, issn 0038-5700Article

Growth and acoustical properties of β-BaB2O4crystalsATUCHIN, V. V; REMESNIK, V. G; TSVETKOV, E. G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 381-385, issn 0277-786X, isbn 0-8194-5848-1, 1Vol, 5 p.Conference Paper